ND: YVO4 -Diode Pumped solidus-statu Lasers

Brevis descriptio:

Nd:YVO4 est unus ex efficacissima laser hospes crystalli currently existens pro diode laser-exantlata solidi status lasers. Nd:YVO4 crystallum optimum est magnae potentiae, stabilis et sumptus efficens diode laserarum solidae civitatis exantlatae.

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Product Description

Nd:YVO4 potens et stabilis potest producere IR, virides, caeruleos cum consilio Nd:YVO4 et frequentia crystallis geminatis. Ad applicationes in quibus densius designatur et unius-modus output-longitudinalis requiruntur, Nd:YVO4 praecipuas utilitates in aliis crystallis laseris communiter adhibitis ostendit.

Utilitas Of Nd:YVO4

Low lassing limen et fastigium efficientia
Amplus excitatur emissionem crucis-sectionem ad lascandum necem
High effusio late elit necem Sed
Optically uniaxiales et magna birefringence emittit polarized laser
Minimum dependentia flare adsum et tendunt ad unum modum output

Basic Properties

Densitas atomica	~1.37x1020 atomi/cm2
Crystal Structure	Zircon tetragonale, globus spatii D4h, a=b=7.118, c=6.293
Densitas	4.22 g/cm2
Mohs duritia	Vitrei, 4.6~5
Scelerisque Expansion Coefficiens	αa=4.43x10-6/K, αc=1.37x10-6/K
Liquefactio Point	1810 ± 25℃
Lasing Wavelengths	914nm, 1064 um, 1342 nm
Optical scelerisque Coefficiens	dna/dT=8.5x10-6/K, dnc/dT=3.0x10-6/K
Emissio excitanda Crucis-Pers	25.0x10-19 cm2 , @1064 nm
Fluorescent Vita	90 ms (circa 50 ms pro 2 atm% Nd doped) @ 808 nm
effusio Coefficientis	31.4 cm-1 @ 808 nm
effusio Longitudo	0.32 mm @ 808 nm
Damnum intrinsecum	Minus 0.1% cm-1, @1064 nm
quaestum Bandwidth	0.96 um (257 GHz) @ 1064 nm
Polarized Laser Emissio	parallela axi optici (c-axis)
Diode Pumped Optical ad Optical Efficientia	> 60%
Sellmeier Equatio (puris YVO4 crystallis)	no2(λ) = 3.77834+0.069736/(λ2 - 0.04724) - 0.0108133λ2
	no2(λ) = 4.59905+0.110534/(λ2 - 0.04813) - 0.0122676λ2

Technical Parameters

ND dopant concentration	0.2 ~ 3 atm%
Dopant tolerantia	intra X% de concentration
Longitudo	0.02 ~ 20mm
Coing specification	AR @ 1064nm, R< 0.1% & HT @ 808nm, T>95%
	HR @ 1064nm, R> 99.8% & HT@ 808um, T>9%
	HR @ 1064um, R>99.8%, HR @ 532 um, R>99% & HT @ 808 um, T>95%
propensio	a-cut crystallinum directum (+/-5℃)
Dimensiva tolerantia	+/-0.1mm(typical), +/-0.005mm magna praecisio praesto esse potest postulanti.
Wavefront corruptelam	<λ/8 ad 633nm
Superficiem qualit	Melius quam 20/10 Scratch/Dig per MIL-O-1380A
Parallelismus	<X arcus seconds